Adata AD2800E001GOU2 Fiche technique télécharger pdf (Page 5)

ADQVD1A08_DDR2-800+(CL4)_1GB(128Mx8_Pb free) Rev.1 2008/09/17 Page 5 of 6

Absolute Maximum Ratings

Parameter Symbol Value Unit

Voltage on VDD supply relative to Vss VDD -1.0 ~ +2.3 V

Voltage on VDDQ supply relative to Vss VDDQ -0.5 ~ +2.3 V

Voltage on VDDL supply relative to Vss VDDQ -0.5 ~ +2.3 V

Voltage on any pin relative to Vss VIN, Vout -0.5 ~ +2.3 V

Storage temperature TSTG -55 ~ +100

Note: DDR2 SDRAM component specification.

Operation Temperature Condition

Parameter Symbol Value Unit Note

DRAM Component Case Temperature Range

TC 0~+95

1

Note: (1) If the DRAM case temperature is above 85’C, the Auto-Refresh command interval has to be reduced to tREFI=3.9us.

DC Operating Condition

Voltage referenced to Vss = 0V, VDD&VDDQ=1.8V±0.1V, Tc = 0 to 85

Parameter Symbol Min Max Unit Note

VDD 1.7 1.9 V 4,5 Supply Voltage

V

DDSPD 1.7 3.6 V

Supply Voltage for DLL VDDL 1.7 1.9 V 4

Supply Voltage for Output VDDQ 1.7 1.9 V 4,5

Input Reference Voltage VREF 0.49 x VDDQ 0.51 x VDDQ V 1,2

Termination Voltage VTT VREF - 0.04 VREF + 0.04 V 3

Note: (1) There is no specific device VDD supply voltage requirement for SSTL_1.8 compliance. However under all conditions VDDQ must be

less than or equal to VDD.

(2) The value of VREF may be selected by the user to provide optimum noise margin in the system. Typically, the value of VREF is

expected to be about 0.5 x VDDQ of the transmitting device and VREF is expected to track variations in VDDQ.

(3) Peak to peak ac noise on VREF may not exceed +/- 2% VREF (ac).

(4) VTT of transmitting device must track VREF of receiving device.

(5) VDDQ tracks with VDD, VDDL tracks with VDD. AC parameters are measured with VDD, VDDQ and VDDL tied together.

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